Qualcomm has finally launched their new Snapdragon 835 flagship processor officially into the market. The chipmaker has teamed up with Samsung to develop the new chip which is built on 10nm FinFET node that entered mass production in October.
The processor is based on the Samsung’s 10nm processing. It allows up to a 30% increase in area efficiency with a 27% improvement in performance and is coming in 2017. The Samsung’s new 10nm FinFET process while processing allows up to a 30% increase in area efficiency with a 27% improvement in performance or up to 40% less power consumption. These process improvements are now combined with a more advanced chip design and thus can create significant battery life enhancements.
With the Snapdragon 835, Qualcomm also announced their next-gen charging technology as well called to be Quick Charge 4.0 and is up to 20% faster or 30% more efficient when compared to Quick Charge 3.0. Qualcomm claims that with just 5 minutes of charging, Quick Charge 4.0 can charge your phone’s battery to offer 5 hours worth of battery life which is impressive. Also you can expect to charge your battery to 50% in just 15 minutes. Quick CHarge 4.0 is compatible with USB Type-C and USB Power Delivery, saves a lot of battery, has INOV (Intelligent Negotiation for Optimum Voltage) as rumored, and is capable of dual-charging as well.
The Snapdragon 835 is already in the production process and is expected to be available commercially in the devices by the end of Q2 of 2017. While, we can also expect Quick Charge 4.0 compatible devices in the market by the end of Q2 of 2017 as well.
